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Molecular approaches to p- and n-nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport propertiesJUNQI XIE; TOLLE, J; D'COSTA, V. R et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 816-823, issn 0038-1101, 8 p.Conference Paper

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